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mpn: TS512MLK72V3N

4GB 1333 DDR3 ECC 240PIN DIMM UNBUFF CL9 1.5V

Highlights

  • RoHS compliant product
  • JEDEC standard 1.5V ± 0.075V power supply
  • Support ECC error detection and correction
  • 8 bit pre-fetch
  • Bi-directional differential data-strobe
  • Internal calibration through ZQ pin
  • On Die Termination with ODT pin
  • Serial presence detect with EEPROM
  • Asynchronous reset
  • On DIMM thermal sensor support

Marketing description

The TS512MLK72V3N is a 512M x 72bits DDR3-1333 ECC Unbuffered-DIMM. The TS512MLK72V3N consists of 18pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The TS512MLK72V3N is a dual in-line memory module and is intended for mounting into 240-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Capacity

Upgrade Type

Type

Technology

Form Factor

Standard Warranty


TS512MLK72V3N

4GB 1333 DDR3 ECC 240PIN DIMM UNBUFF CL9 1.5V

Highlights

  • RoHS compliant product
  • JEDEC standard 1.5V ± 0.075V power supply
  • Support ECC error detection and correction
  • 8 bit pre-fetch
  • Bi-directional differential data-strobe
  • Internal calibration through ZQ pin
  • On Die Termination with ODT pin
  • Serial presence detect with EEPROM
  • Asynchronous reset
  • On DIMM thermal sensor support

Marketing description

The TS512MLK72V3N is a 512M x 72bits DDR3-1333 ECC Unbuffered-DIMM. The TS512MLK72V3N consists of 18pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The TS512MLK72V3N is a dual in-line memory module and is intended for mounting into 240-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Technical Specifications

Capacity
Upgrade Type
Type
Technology
Form Factor
Module Height (inch)
Speed
Latency Timings
Data Integrity Check
Features
Module Configuration
Chips Organization
Voltage
Compatible Slots
Service & Support
Designed For
Product Description
Product Type
Memory Type
Manufacturer Warranty
manufacturer
last_sync

Standard Warranty